High‐Throughput Characterization of Metal Electrode Performance for Electric‐Field‐Induced Resistance Switching in Metal/Pr0.7Ca0.3MnO3/Metal Structures

High-throughput exploration of electrode materials is demonstrated with an epitaxial thin-film device to determine the appropriate electrode materials for a resistance random access memory. In I–V measurements, only electrode pairs containing Al showed resistance switching (see figure). The disappearance of switching in the four-probe measurements suggests that switching occurs near the interface of the Al electrode and the Pr0.7Ca0.3MnO3 film.