功勋
材料科学
热电效应
热电材料
热导率
声子散射
凝聚态物理
硫系化合物
兴奋剂
纳米颗粒
塞贝克系数
半导体
纳米技术
光电子学
热力学
复合材料
物理
作者
Min‐Seok Kim,Woojin Lee,Ki‐Hyun Cho,Jae-Pyoung Ahn,Yun‐Mo Sung
出处
期刊:ACS Nano
[American Chemical Society]
日期:2016-07-09
卷期号:10 (7): 7197-7207
被引量:48
标识
DOI:10.1021/acsnano.6b03696
摘要
Dramatic enhancements in the figure of merit have been obtained in bulk thermoelectric materials by doping, band engineering, and nanostructuring. Especially, in p-type thermoelectrics, high figure of merits near 2.0 have been reported in a few papers through the reduction in lattice thermal conductivity and the advancement in power factors. However, there exists no report on the n-type systems showing high figure of merits because of their intrinsically low Seebeck coefficients. Here, we demonstrate that a nanostructured bulk n-type thermoelectric material that was assembled by sintering spinodally decomposed lead chalcogenide nanoparticles having a composition of PbSe0.5Te0.5 reaches a high figure of merit of 1.85. The spinodally decomposed nanoparticles permit our thermoelectric material to have extremely low lattice thermal conductivity and a high power factor as a result of nanostructuring, electronic optimization, insertion of an impurity phase and phase change in local areas. We propose that this interesting concept would be one of the promising approaches that overcome limitation arising from the fact that most parameters in the figure of merit are closely correlated.
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