Progress and prospects for GaN and the III–V nitride semiconductors

We review recent research results pertaining to GaN, AIN and InN, focusing on present-day techniques and future prospects. The molecular beam epitaxy and metal-organic vapor phase epitaxy growth techniques, as they have been applied to the nitrides, are described. New developments in plasma-based sources and substrates are covered. We also discuss the most recent developments towards an eventual GaN-based device technology, including the first GaN p-n junction light-emitting diode. Ongoing work, aimed at developing the necessary processing skills for GaN devices, is presented. We conclude by discussing near-term goals and identifying critical areas in need of future research.