Analytical modeling of recessed double gate junctionless field‐effect‐transistor in subthreshold region

Abstract In this work, we have presented an analytical model for a recently proposed symmetrical recessed double gate junctionless field‐effect transistor (R_DGJLFET) operating in subthreshold region. The model has been developed by solving a two‐dimensional Poisson's equation in three continuous rectangular silicon regions, resulting in explicit expressions for surface potential, center potential, and eventually the subthreshold drain current. The model provides deeper physical insights by successfully incorporating the effect of various design parameters such as doping concentration, gate length, gate work function, and effective oxide thickness on the subthreshold drain current. Moreover, the effect of variations in gate length on the subthreshold slope has also been presented. The model results have been validated with the simulation results obtained from the Silvaco Atlas tool and found reasonably close.