光电探测器
紫外线
兴奋剂
材料科学
纳米晶
光电子学
纳米技术
作者
Jing Ding,Shouying Mu,Weidong Xiang,Nan Ding,Wen Xu,Xiaojuan Liang
出处
期刊:Social Science Research Network
[Social Science Electronic Publishing]
日期:2022-01-01
摘要
Silicon (Si) photodetectors (PDs) have been widely used due to their many excellent property, however, the extremely weak ultraviolet (UV) photo-response severely affect its future development. In this work, we controlled the concentration of CsPbCl 2 Br 1 NCs in the glass and obtained samples with local emission and high transmittance. Furthermore, we incorporated Eu 3+ into CsPbCl 2 Br 1 perovskite nanocrystals glass (PNG) to achieve efficient ultraviolet (UV) to visible emissions and boost the UV response of Si PDs. Finally, after combining with the CsPbCl 2 Br 1 : Eu 3+ PNG on the Si PDs, the responsivity increased to 0.0088 A/W at 320 nm, which means 8.8 times higher than that of the pristine Si PDs. Moreover, Si PDs based on CsPbCl 2 Br 1 : Eu 3+ PNG exhibited excellent stability, and the photocurrents of the device almost not changed after 60 days. This work offers a novel strategy for improving UV response of Si PDs.Silicon (Si) photodetectors (PDs) have been widely used due to their many excellent property, however, the extremely weak ultraviolet (UV) photo-response severely affect its future development. In this work, we controlled the concentration of CsPbCl 2 Br 1 NCs in the glass and obtained samples with local emission and high transmittance. Furthermore, we incorporated Eu 3+ into CsPbCl 2 Br 1 perovskite nanocrystals glass (PNG) to achieve efficient ultraviolet (UV) to visible emissions and boost the UV response of Si PDs. Finally, after combining with the CsPbCl 2 Br 1 : Eu 3+ PNG on the Si PDs, the responsivity increased to 0.0088 A/W at 320 nm, which means 8.8 times higher than that of the pristine Si PDs. Moreover, Si PDs based on CsPbCl 2 Br 1 : Eu 3+ PNG exhibited excellent stability, and the photocurrents of the device almost not changed after 60 days. This work offers a novel strategy for improving UV response of Si PDs.
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