异质结
二硫化钼
材料科学
光致发光
双极扩散
纳米技术
光电子学
半导体
钼
晶体管
电子
物理
量子力学
电压
冶金
作者
Suvi‐Tuuli Akkanen,Christopher G. Edwards,Yaoqiang Zhou,Ruihuan Fang,Seyed Hossein Hosseini Shokouh,Zhipei Sun
出处
期刊:Nano Letters
[American Chemical Society]
日期:2025-03-05
标识
DOI:10.1021/acs.nanolett.4c06512
摘要
Optical modification is a fast, cost-effective, and scalable approach to tailoring the physical properties of two-dimensional (2D) materials for various applications. However, most previous efforts have focused on modifying individual 2D materials, which fails to utilize the method to its fullest potential. In this paper, heterostructures composed of hBN-capped molybdenum ditelluride (MoTe2) and molybdenum disulfide (MoS2) are optically modified with a continuous wave laser. The process simultaneously thins MoS2 and induces clustering of tellurium atoms from the ablated MoTe2. These structural changes result in significant enhancements of the physical properties, including a 43-fold increase in MoS2 photoluminescence and the transformation of the heterojunction into an anti-ambipolar transistor. These findings highlight a previously unutilized pathway to tune the heterostructure properties for applications in novel electronics and optoelectronics.
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