Physically‐Deposited Hole Transporters in Perovskite PV: NiOx Improved with Li/Mg Doping (Adv. Mater. Technol. 7/2024)

非阻塞I/O 兴奋剂 材料科学 钙钛矿(结构) 运输机 光电子学 化学 结晶学 生物化学 催化作用 基因
作者
Salih Alper Akalın,Mustafa Erol,Begüm Uzunbayır,Sibel Oğuzlar,Serdar Yıldırım,Fatma Pınar Gökdemir Choi,Serap Güneş,U. Deneb Menda,Manuel J. Mendes
出处
期刊:Advanced materials and technologies [Wiley]
卷期号:9 (7)
标识
DOI:10.1002/admt.202470030
摘要

Advanced Materials TechnologiesVolume 9, Issue 7 2470030 Cover PictureFree Access Physically-Deposited Hole Transporters in Perovskite PV: NiOx Improved with Li/Mg Doping (Adv. Mater. Technol. 7/2024) Salih Alper Akalin, Salih Alper Akalin Center for Fabrication and Application of Electronic Materials, Dokuz Eylül University, Buca, Izmir, 35390 Turkiye Department of Nanoscience and Nanoengineering, Dokuz Eylul University, Buca, Izmir, 35390 TurkiyeSearch for more papers by this authorMustafa Erol, Mustafa Erol Center for Fabrication and Application of Electronic Materials, Dokuz Eylül University, Buca, Izmir, 35390 Turkiye Department of Nanoscience and Nanoengineering, Dokuz Eylul University, Buca, Izmir, 35390 Turkiye Department of Metallurgical and Materials Engineering, Dokuz Eylul University, Buca, Izmir, 35390 TurkiyeSearch for more papers by this authorBegum Uzunbayir, Begum Uzunbayir Department of Metallurgical and Materials Engineering, Dokuz Eylul University, Buca, Izmir, 35390 TurkiyeSearch for more papers by this authorSibel Oguzlar, Sibel Oguzlar Department of Nanoscience and Nanoengineering, Dokuz Eylul University, Buca, Izmir, 35390 TurkiyeSearch for more papers by this authorSerdar Yildirim, Serdar Yildirim Center for Fabrication and Application of Electronic Materials, Dokuz Eylül University, Buca, Izmir, 35390 Turkiye Department of Metallurgical and Materials Engineering, Dokuz Eylul University, Buca, Izmir, 35390 TurkiyeSearch for more papers by this authorFatma Pinar Gokdemir Choi, Fatma Pinar Gokdemir Choi Faculty of Arts and Science, Department of Physics, Davutpasa Campus, Yildiz Technical University, Esenler, Istanbul, 34210 TurkiyeSearch for more papers by this authorSerap Gunes, Serap Gunes Faculty of Arts and Science, Department of Physics, Davutpasa Campus, Yildiz Technical University, Esenler, Istanbul, 34210 TurkiyeSearch for more papers by this authorUgur Deneb Yilmazer Menda, Ugur Deneb Yilmazer Menda i3N/CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, Caparica, 2829-516 PortugalSearch for more papers by this authorManuel J. Mendes, Manuel J. Mendes i3N/CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, Caparica, 2829-516 PortugalSearch for more papers by this author Salih Alper Akalin, Salih Alper Akalin Center for Fabrication and Application of Electronic Materials, Dokuz Eylül University, Buca, Izmir, 35390 Turkiye Department of Nanoscience and Nanoengineering, Dokuz Eylul University, Buca, Izmir, 35390 TurkiyeSearch for more papers by this authorMustafa Erol, Mustafa Erol Center for Fabrication and Application of Electronic Materials, Dokuz Eylül University, Buca, Izmir, 35390 Turkiye Department of Nanoscience and Nanoengineering, Dokuz Eylul University, Buca, Izmir, 35390 Turkiye Department of Metallurgical and Materials Engineering, Dokuz Eylul University, Buca, Izmir, 35390 TurkiyeSearch for more papers by this authorBegum Uzunbayir, Begum Uzunbayir Department of Metallurgical and Materials Engineering, Dokuz Eylul University, Buca, Izmir, 35390 TurkiyeSearch for more papers by this authorSibel Oguzlar, Sibel Oguzlar Department of Nanoscience and Nanoengineering, Dokuz Eylul University, Buca, Izmir, 35390 TurkiyeSearch for more papers by this authorSerdar Yildirim, Serdar Yildirim Center for Fabrication and Application of Electronic Materials, Dokuz Eylül University, Buca, Izmir, 35390 Turkiye Department of Metallurgical and Materials Engineering, Dokuz Eylul University, Buca, Izmir, 35390 TurkiyeSearch for more papers by this authorFatma Pinar Gokdemir Choi, Fatma Pinar Gokdemir Choi Faculty of Arts and Science, Department of Physics, Davutpasa Campus, Yildiz Technical University, Esenler, Istanbul, 34210 TurkiyeSearch for more papers by this authorSerap Gunes, Serap Gunes Faculty of Arts and Science, Department of Physics, Davutpasa Campus, Yildiz Technical University, Esenler, Istanbul, 34210 TurkiyeSearch for more papers by this authorUgur Deneb Yilmazer Menda, Ugur Deneb Yilmazer Menda i3N/CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, Caparica, 2829-516 PortugalSearch for more papers by this authorManuel J. Mendes, Manuel J. Mendes i3N/CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, Caparica, 2829-516 PortugalSearch for more papers by this author First published: 04 April 2024 https://doi.org/10.1002/admt.202470030AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Graphical Abstract Hole Transport Material In article number 2301760, Salih Alper Akalin and co-workers explore Li and Mg co-doped NiOx thin films physically deposited from developed sputtering targets obtained through cold isostatic pressing and sintering. Improvements in mobility and conductivity values are observed with Li and Mg doping, which contribute to enhanced PSC performance when used as an HTM layer in the glass-indium tin oxide/NiOx-based HTM/MAPbI3/phenyl butryic acid methyl ester bathocuproine/Ag architecture. Volume9, Issue7April 4, 20242470030 RelatedInformation
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