Te nanomesh/black‐Si van der Waals Heterostructure for High‐Performance Photodetector

Abstract Van der Waals (vdW) heterostructures have gained significant attention in photodetectors due to their seamless integration with materials possessing diverse functionalities. In this study, the fabrication of a Te nanomesh/black‐Si vdW heterostructure is presented, and investigated its photoresponse properties. The heterostructure exhibits a pronounced rectification behavior, characterized by a rectification ratio of 2.2 × 10 4 . Notably, the heterostructure device demonstrates commendable photoresponse properties, including a high responsivity of 350 mA W −1 , an extensive linear dynamic range of 45.5 dB, a high specific detectivity of 9.6 × 10 11 Jones, and a wide spectral response ranging from 400 to 1550 nm. Furthermore, the heterostructure exhibits rapid response, with a rise time and a decay time of 70 and 140 µs, respectively. These exceptional photoresponse properties can be attributed to the robust internal built‐in electrical field at the hetero‐interface and the augmented light absorption in black‐Si. The outstanding photoresponse properties of the heterostructure make it a promising candidate for multiwavelength single‐pixel imaging, enabling the collection of mask patterns under varying wavelengths of light radiation. This work provides a novel approach for fabricating mixed‐dimensional vdW heterostructures, offering promising prospects for advancements in optoelectronics.