材料科学
二硒化钨
记忆电阻器
神经形态工程学
纳米技术
光电子学
硅
透射电子显微镜
生产线后端
过渡金属
电子工程
人工神经网络
计算机科学
生物化学
化学
图层(电子)
机器学习
工程类
催化作用
作者
S. S. Teja Nibhanupudi,Anupam Roy,Sayema Chowdhury,Ryan Schalip,Matthew J. Coupin,Kevin C. Matthews,Md. Hasibul Alam,Biswarup Satpati,Hema C. P. Movva,Christopher J. Luth,Siyu Wu,Jamie H. Warner,Sanjay K. Banerjee
标识
DOI:10.1021/acsami.3c18446
摘要
Low-temperature large-area growth of two-dimensional (2D) transition-metal dichalcogenides (TMDs) is critical for their integration with silicon chips. Especially, if the growth temperatures can be lowered below the back-end-of-line (BEOL) processing temperatures, the Si transistors can interface with 2D devices (in the back end) to enable high-density heterogeneous circuits. Such configurations are particularly useful for neuromorphic computing applications where a dense network of neurons interacts to compute the output. In this work, we present low-temperature synthesis (400 °C) of 2D tungsten diselenide (WSe
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