Dual 4-A High-Speed Low-Side Gate Driver IC for GaN and Si MOSFETs and IGBTs

The universal and high-speed dual-channel low-side gate driver integrated circuit test chip is presented. It has been made using TSMC 180 nm BCD technology, has a chip die area of 1.3 x 1.2 mm, and a tiny 3 x 3 mm package. The dual high-speed low-side gate driver has a supply voltage from 4.5 V to 20 V, peak output currents of $\pm 4 A, \sim$ 1 mA quiescent current, an extremely low propagation delay of about 11 ns, and best-in-class performance at the low level of the supply voltage. The developed dual driver is intended to be used in active rectifier, motor control, secondary switching power supplies, as well as a pulsed transformer or line driver. This work has been inspired by a review of the market trends in power integrated circuits and power switches up to 2030, as well as the power MOSFETs and gate drivers. The mainline has been described as GaN power MOSFETs widespread use. The developed universal gate driver can be used in conventional Si-based power supply design as well as modern GaN-based power supplies.