光探测
光电二极管
响应度
光电子学
光子学
硅光子学
材料科学
光电探测器
量子点
硅
量子效率
光学
物理
作者
Chao Pang,Yu‐Hao Deng,Ezat Kheradmand,Luis Moreno Hagelsieb,Yüjie Guo,David Cheyns,Pieter Geiregat,Zeger Hens,Dries Van Thourhout
出处
期刊:APL photonics
[American Institute of Physics]
日期:2024-06-01
卷期号:9 (6)
被引量:2
摘要
Silicon photonics faces a persistent challenge in extending photodetection capabilities beyond the 1.6 µm wavelength range, primarily due to the lack of appropriate epitaxial materials. Colloidal quantum dots present a promising solution here, offering distinct advantages, such as infrared wavelength tunability, cost-effectiveness, and facile deposition. Their unique properties position them as a potential candidate for enabling photodetection in silicon photonics beyond the conventional telecom wavelength, thereby expanding the potential applications and capabilities within this domain. In this study, we have successfully integrated lead sulfide (PbS) colloidal quantum dot photodiodes (QDPDs) onto silicon waveguides using standard process techniques. The integrated photodiodes exhibit a remarkable responsivity of 1.3 A/W (with an external quantum efficiency of 74.8%) at a wavelength of 2.1 µm, a low dark current of only 106 nA, and a bandwidth of 1.1 MHz under a −3 V bias. To demonstrate the scalability of our integration approach, we have developed a compact 8-channel spectrometer incorporating an array of QDPDs. This achievement marks a significant step toward realizing a cost-effective photodetector solution for silicon photonics, particularly tailored for a wide range of sensing applications around the 2 µm wavelength range.
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