A Novel Junction Termination Technique with Excellent Cost-Performance and Extraordinary Anti-Charge-Deviation Ability

A novel junction termination technique (JTT) is proposed, which combines three techniques of the optimum variation lateral doping (OPTVLD), buried-layer (BL) and high-k (HK). By utilizing the OPTVLD and BL techniques, an ideal electric field distribution is achieved, resulting in excellent cost-performance. Moreover, by adopting a SrTiO 3 film with high permittivity, which induces bound charges that respond automatically to the deviated charges, an extraordinary anti-charge-deviation ability is obtained for the first time. According to the simulation results, in comparison with the conventional JTT structure without the SrTiO 3 film, the proposed one gets better process windows increased by 93.3%, 73.9%, 73.9% and 61.3%, with respect to the deviation factors of dose, temperature, heating time and interface charge, respectively. Moreover, since the proposed JTT can be realized by BiCMOS-compatible process, it is budget-friendly and highly feasible.