SEM-image contour has been widely used to investigate pattern properties such as critical dimension (CD) or line edge roughness (LER), providing value information about patterning quality. However, combination of layout and SEM contour analysis has not studied profoundly due to its complexity. In this paper, we explored two applications based on SEM contour extraction: 1. Etch bias verification based on PH/HMET/ET SEM images. 2. Contact edge roughness based on RMSE extracted from SEM contours and thus selecting the best setting to assure adequacy of patterns