材料科学
分子束外延
钐
薄膜
氮化物
基质(水族馆)
单晶硅
光电子学
自旋电子学
兴奋剂
氧化物
纳米技术
图层(电子)
外延
冶金
铁磁性
硅
无机化学
凝聚态物理
化学
海洋学
物理
地质学
作者
Kevin D. Vallejo,Zach Cresswell,Volodymyr Buturlim,Brooke Newell,Krzysztof Gofryk,Brelon J. May
出处
期刊:Crystals
[Multidisciplinary Digital Publishing Institute]
日期:2024-08-28
卷期号:14 (9): 765-765
被引量:1
标识
DOI:10.3390/cryst14090765
摘要
Rare-earth nitrides are an exciting family of materials with a wide variety of properties desirable for new physics and applications in spintronics and superconducting devices. Among them, samarium nitride is an interesting compound reported to have ferromagnetic behavior coupled with the potential existence of p-wave superconductivity. Synthesis of high-quality thin films is essential in order to manifest these behaviors and understand the impact that vacancies, structural distortions, and doping can have on these properties. In this study, we report the synthesis of samarium nitride monocrystalline thin films on magnesium oxide (001) substrates with a chromium nitride capping layer using molecular beam epitaxy (MBE). We observed a high-quality monocrystalline SmN film with matching orientation to the substrate, then optimized the growth temperature. Despite the initial 2 nm of growth showing formation of a potential samarium oxide layer, the subsequent layers showed high-quality SmN, with semiconducting behavior revealed by an increase in resistivity with decreasing temperature. These promising results highlight the importance of studying diverse heteroepitaxial schemes and open the door for integration of rare-earth nitrides and transition metal nitrides for future spintronic devices.
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