调制(音乐)
量子点
光电子学
兴奋剂
激光器
材料科学
量子点激光器
量子阱
半导体激光器理论
物理
光学
半导体
声学
作者
Huiwen Deng,Jae‐Seong Park,Xuezhe Yu,Zizhuo Liu,Hui Jia,Haotian Zeng,Junjie Yang,Shujie Pan,Siming Chen,A.J. Seeds,Mingchu Tang,Peter M. Smowton,Huiyun Liu
标识
DOI:10.1002/apxr.202400045
摘要
Abstract To further enhance the performance and understand the mechanism of InAs quantum dot (QD) laser under high temperature, both theoretically and experimentally it is investigated, the effects of the technique of the combination of direct n‐type doping and modulation p‐type doping, namely co‐doping, in the active region for a wide temperature range over 165 °C. Through the comparison of co‐doped, modulation p‐type doped, direct n‐type doped, and undoped QD lasers, it reveals that the co‐doping technique provides a significantly reduced threshold current density across the whole temperature range and robust high‐temperature operation. Furthermore, it is also observed that the effectiveness of co‐doping in suppressing round‐state quenching is comparable to that of p‐doping. The improvements in the doping strategies are also revealed through the rate equation simulation of the lasers.
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