Using nanosecond laser pulses to debond the glass-EVA layer from silicon photovoltaic modules

The active silicon cell of a solar photovoltaic (PV) panel is covered by an ethylenevinylacetate (EVA) adhesive and a protective top glass layer. Separating this glass-EVA layer from the underlying silicon represents a bottleneck for recycling PV panels. Previous work has shown that the EVA-Si bond can be weakened by applying a continuous source of heat to melt the EVA. In this paper, a new method using nanosecond laser pulses is demonstrated to induce transient melting selectively at the EVA-Si interface. This impulsive heating method can cleanly separate the glass-EVA layer from the silicon in both model and commercial multicrystalline PV panels. The dependence of this debonding on parameters like laser pulse fluence (laser pulse energy per area), wavelength, applied pressure, and scan speed were characterized. For model PV panels, the single-pulse laser fluences required for spontaneous separation of the assembly under the force of gravity, were 0.23, 0.32 and 0.78 J/cm