极化子
激子
猝灭(荧光)
材料科学
光电子学
二极管
有机发光二极管
化学物理
凝聚态物理
有机半导体
发光二极管
物理
纳米技术
光学
量子力学
荧光
电子
图层(电子)
作者
Kwangmo Yang,Doyoun Kwon,Sungho Nam,Joonghyuk Kim,Yeon Sook Chung,Hyunjoon Yoo,Insung Park,Yongsup Park,Ji-Whan Kim,Jaesang Lee
标识
DOI:10.1103/physrevx.14.041009
摘要
In organic light-emitting diodes (OLEDs), understanding the efficiency loss mechanism known as exciton-polaron quenching (EPQ) has been a longstanding challenge. Traditionally, EPQ was believed to occur mainly the bulk of the OLED emission layer (EML) due to the coexistence of polarons and excitons, limiting our understanding of its full impact. Here, we report a previously overlooked phenomenon termed “interfacial EPQ (Inf. EPQ),” which occurs at the heterointerface between the EML and the adjacent charge transport layer (CTL). We observe the transfer of EML excitons to CTL polarons across this interface, spanning distances of up to 4 nm. Notably, Inf. EPQ exceeds EPQ within the EML bulk, even in devices with a interfacial energy barrier ( > 0.2 eV ). We propose a methodology that enables independent probing of Inf. EPQ, systematic validation of its essential parameters, and the identification of Dexter energy transfer as its governing mechanism. Importantly, our findings highlight Inf. EPQ as a phenomenon across devices with various luminescent mechanisms, wavelengths, and injection levels. By effectively addressing Inf. EPQ, we achieve efficiency enhancements in red, green, and blue phosphorescent OLEDs, by 70 % ± 8 % , 47 % ± 5 % , and 66 % ± 6 % , respectively. Our work advances the physical understanding of exciton and polaron dynamics at organic heterointerfaces, providing applicable solutions to Inf. EPQ-related issues in practical devices. Published by the American Physical Society 2024
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