材料科学
理论(学习稳定性)
纳米技术
化学工程
计算机科学
工程类
机器学习
作者
Ciyu Ge,Zunyu Liu,Yongchen Zhu,Yilong Zhou,Borui Jiang,Jiaxing Zhu,Xuke Yang,Yongxin Zhu,Shuyu Yan,Haojun Hu,Haisheng Song,Luying Li,Chao Chen,Jiang Tang
出处
期刊:Small
[Wiley]
日期:2023-09-05
卷期号:20 (2)
被引量:11
标识
DOI:10.1002/smll.202304721
摘要
Abstract Wide bandgap semiconductors, particularly In 2 O 3 :Sn (ITO), are widely used as transparent conductive electrodes in optoelectronic devices. Nevertheless, due to the strohave beenng scattering probability of high‐concentration oxygen vacancy (V O ) defects, the mobility of ITO is always lower than 40 cm 2 V −1 s −1 . Recently, hydrogen‐doped In 2 O 3 (In 2 O 3 :H) films have been proven to have high mobility (>100 cm 2 V −1 s −1 ), but the origin of this high mobility is still unclear. Herein, a high‐resolution electron microscope and theoretical calculations are employed to investigate the atomic‐scale mechanisms behind the high carrier mobility in In 2 O 3 :H films. It is found that V O can cause strong lattice distortion and large carrier scattering probability, resulting in low carrier mobility. Furthermore, hydrogen doping can simultaneously reduce the concentration of V O , which accounts for high carrier mobility. The thermal stability and acid–base corrosion mechanism of the In 2 O 3 :H film are investigated and found that hydrogen overflows from the film at high temperatures (>250 °C), while acidic or alkaline environments can cause damage to the In 2 O 3 grains themselves. Overall, this work provides insights into the essential reasons for high carrier mobility in In 2 O 3 :H and presents a new research approach to the doping and stability mechanisms of transparent conductive oxides.
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