Polarization‐ and Gate‐Tunable Optoelectronic Reverse in 2D Semimetal/Semiconductor Photovoltaic Heterostructure

Abstract Polarimetric photodetector can acquire higher resolution and more surface information of imaging targets in complex environments due to the identification of light polarization. To date, the existing technologies yet sustain the poor polarization sensitivity (<10), far from market application requirement. Here, the photovoltaic detectors with polarization‐ and gate‐tunable optoelectronic reverse phenomenon are developed based on semimetal 1T′‐MoTe 2 and ambipolar WSe 2 . The device exhibits gate‐tunable reverse in rectifying and photovoltaic characters due to the directional inversion of energy band, yielding a wide range of current rectification ratio from 10 −2 to 10 3 and a clear object imaging with 100 × 100 pixels. Acting as a polarimetric photodetector, the polarization ratio (PR) value can reach a steady state value of ≈30, which is compelling among the state‐of‐the‐art 2D‐based polarized detectors. The sign reversal of polarization‐sensitive photocurrent by varying the light polarization angles is also observed, that can enable the PR value with a potential to cover possible numbers (1→+∞/‐∞→−1). This work develops a photovoltaic detector with polarization‐ and gate‐tunable optoelectronic reverse phenomenon, making a significant progress in polarimetric imaging and multifunction integration applications.