六甲基二硅氧烷
材料科学
化学气相沉积
分析化学(期刊)
电容
等离子体增强化学气相沉积
光电子学
薄膜晶体管
感应耦合等离子体
图层(电子)
化学
纳米技术
等离子体
电极
物理
色谱法
量子力学
物理化学
作者
Chong Peng,Yiming Liu,C. X. Yu,Yi Zhao
摘要
Herein, we employed inductively coupled plasma enhanced chemical vapor deposition using a hexamethyldisiloxane/O2 precursor to deposit SiO2 with electrical double layer capacitance on SiNx forming SiO2/SiNx stacked films as a dielectric layer, achieving high-performance synaptic transistors. The effect of O2 concentration during SiO2 deposition on the transistor performance was investigated. The results of Fourier transform infrared spectroscopy and x-ray photoemission spectroscopy confirm that increasing O2 concentration during deposition boosts the amounts of protons moving between the bridging oxygen in the Si–O–Si network, improving the electrical double layer capacitance of SiO2. Furthermore, SiNx in the stacked structure exhibits a higher relative permittivity than SiO2, resulting in a more concentrated electric field within the SiO2 layer, facilitating proton ionization. SiO2/SiNx stacked film with SiO2 deposited at the oxygen flow rate of 150 sccm exhibited the maximum capacitance of 2.87 μF/cm2 at 4 Hz. The transistor with SiO2 deposited at the oxygen flow rate of 150 sccm achieved the maximum paired pulse facilitation index of 132.9% and the maximum A50/A1 index of 155.4%. This work demonstrates that SiO2 deposited via inductively coupled plasma enhanced chemical vapor deposition using a hexamethyldisiloxane/O2 precursor for application potential in artificial neuromorphic computing.
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