电负性
工作职能
金属
吸附
共价键
材料科学
半导体
化学物理
密度泛函理论
电子结构
光催化
杂质
带隙
结晶学
原子物理学
化学
物理化学
计算化学
催化作用
有机化学
生物化学
物理
光电子学
冶金
作者
Xin Zhou,Keyu Zhou,Huan Zhang,Xinyi Sun
标识
DOI:10.1002/cphc.202401131
摘要
We have performed DFT calculations to study the adsorption of single metal atoms (M=Ti, V, Cr, Mn, Fe, Co, Ni, Cu) on both BaO- and TaON-terminated surfaces of cis-BaTaO2N (001). We have identified the most stable adsorption configuration of each case and explored the relative stability, structural deformations, charge transfer, work function, density of states and mechanism of photocatalytic HER. For BaO termination, all of the adatoms bind covalently on top of the surface oxygens. For TaON termination, the metal atoms are located at the fourfold hollow site. The single metal atoms tend to exist on TaON-termination while they are apt to aggregate on BaO-termination. The formation of impurity states in the band gap is mostly originated from the adatom. When electrons are transferred from the adatom to the surface, the conduction band of semiconductor becomes partially occupied. The charge gained from the BaO termination or transferred to the TaON termination reduces with the increase in electronegativity of metal adatoms. The attachment of metal atoms on the BaO termination is favorable to the improvement of HER activity. While the TaON termination adsorbed with Ti, V and Cr may have better or comparable performance of HER compared with the pure surface.
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