锗
材料科学
光电子学
透明度(行为)
带隙
工程物理
硅
计算机科学
物理
计算机安全
作者
Çiçek Boztuğ,Feng Chen,Jose Sanchez-Perez,F. F. Sudradjat,Deborah M. Paskiewicz,R. B. Jacobson,M. G. Lagally,Roberto Paiella
标识
DOI:10.1364/qels.2011.pdpa2
摘要
We show that mechanically stressed nanomembranes can be used to introduce sufficient tensile strain in Ge to transform it into a direct-bandgap, efficient light-emitting material that can support population inversion and thus provide optical gain.
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