Performance improvement of three terminal heterojunction bipolar transistor based hybrid solar cell using nano-rods

In this research, performance enhancement of three terminal heterojunction bipolar transistor structure based solar cell (HBTSC) is investigated via implementing perovskite layer as emitter absorber region and nanorods within emitter. For this study, a p-n-p hybrid HBTSC structure has been proposed with MAPbI 3 /CdS/ACZTSe materials for photon absorber layer , and MgF 2 for anti-reflection layer (ARL). The purpose of this research is mainly to optimize emitter (MAPbI 3 ) and CdS nanorods thickness of HBTSC structure therefore boosting device efficiency through optoelectronic and electrical simulations. During obtaining the results, the effects of the surface, Shockley–Read–Hall (SRH) and radiative recombination mechanisms has been considered. Two new proposed structures based on planar MAPbI 3 /CdS/ACZTSe & MAPbI 3 /CdS nanorods/CdS/ACZTSe perovskite–kesterite based hybrid HBTSCs has been introduced. The maximum efficiency ( η ) of 23.45% and short-circuit current density ( J s c ) of 39.93 mAcm −2 are obtained for planar MAPbI 3 /CdS/ACZTSe based perovskite–kesterite HBTSCs with open-circuit voltage ( V o c ) of 760.05 mV and fill factor ( F F ) of 77.28%, respectively. As for MAPbI 3 /CdS nanorods/CdS/ACZTSe based hybrid HBTSCs with η of 27.91%, J s c of 42.03 mAcm −2 , V o c of 786.8 mV, and F F of 84.39%, a total improvement of 4.46% is achieved when compared to planar hybrid perovskite–kesterite HBTSCs structure. • Top emitter absorber layer is engineered to design 3-T hybrid HBTSCs. • Optimized absorber layers thickness and doping concentration to obtain maximum PCE. • Implemented optimized n-CdS nanorods to obtain the highest PCE of 27.91%. • Overall PCE improvement of 4.46% is achieved by implementing CdS nanorods in MAPbI 3 .