材料科学
铋
热电材料
碲化铋
硒化物
纳米技术
热导率
工程物理
复合材料
冶金
物理
硒
作者
Jana Andžāne,Andrei Felsharuk,Krisjanis Buks,Anatolijs Šarakovskis,Kiryl Niherysh,J. Gabrusenoks,Donāts Erts
标识
DOI:10.1002/admi.202200385
摘要
Abstract In this work, simple and cost‐effective phyiscal vapor deposition method is applied for deposition of single Bi 2 Se 3 , Bi 1.925 Sn 0.075 Se 3 , Bi 2 Se 2.975 Te 0.025 ultrathin films of average thickness 10–12 nm, and for the fabrication of n‐type 5‐layer nanolaminates. The nanolaminates are composed from alternating doped and undoped ultrathin films. Electrical and thermoelectric properties (Seebeck coefficient, resistivity, electron thermal conductivity, charge carrier concentration, and mobility) of nanolaminates as well as single ultrathin undoped and doped films are studied at room temperature under ambient conditions. Both types of nanolaminates show 75–125% increase of the Seebeck coefficient accompanied by the 65–85% reduction of the electron thermal conductivity in comparison with the nanostructured bulk materials of similar chemical compositions. The mechanisms underlying such improvement of properties of studied nanolaminates in comparison with the nanostructured bulk counterparts are discussed.
科研通智能强力驱动
Strongly Powered by AbleSci AI