光学
消光比
材料科学
插入损耗
偏振器
波长
绝缘体上的硅
波导管
硅
绝热过程
光电子学
物理
双折射
热力学
作者
Humaira Zafar,Yanfen Zhai,Juan Esteban Villegas,Florent Ravaux,K. Kennedy,M. F. Pereira,Mahmoud Rasras,Atif Shamim,Dalaver H. Anjum
出处
期刊:Optics Express
[The Optical Society]
日期:2022-03-04
卷期号:30 (6): 10087-10087
被引量:12
摘要
A compact, ultra-broadband and high-performance silicon TE-pass polarizer is proposed and demonstrated experimentally. It is based on partially-etched (ridge) waveguide adiabatic S-bends, input/output tapers and side gratings on a silicon-on-insulator (SOI) platform. A compact footprint and weak back reflections are obtained due to the bent waveguide and the tapers, respectively. An extremely high extinction ratio is achieved by scattering the undesired light in the slab section using the side gratings. The 3D FDTD simulations show a TE loss less than 0.3 dB and an extinction ratio greater than 30 dB over a 500 nm wavelength range (1200 nm to 1700 nm). Measured results show a high TM loss (> 35 dB) and a low TE insertion loss (< 1.5 dB), over a 200 nm wavelength range (1450 nm to 1650 nm). The measured TE loss is < 0.6 dB at a communication wavelength of 1550 nm. The footprint of the optimized design is 65 µm × 20 µm.
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