SiC Trench MOSFET with N-base Super Barrier Rectifier Embedded for Optimizing Reverse Characteristic

A novel double trench SiC MOSFET embedded with N-base super barrier rectifier (NSBR-DTMOS) is proposed in this paper. The NSBR-DTMOS exhibits its diode turn on voltage (V F ) half lower than that of body diode. With the super barrier rectifier (SBR) embedded as the freewheeling diode, the bipolar degradation phenomena caused by the body diode is eliminated successfully. Compared with the conventional DTMOS, the gate-to-drain capacitance (C GD ) and gate-drain charge (Q GD ) are reduced by half, at the cost of the specific ON-resistance (R on ) increases by 9% only. As a result, the figures of merit R on ×Q G and R on ×Q GD are improved by 45% and 54% respectively.