Lv41
490 积分 2021-06-01 加入
Dislocation proliferation at the growth crystal/seed interface of physical vapor transport-grown 4H-SiC crystals
3小时前
待确认
n-situ Observation of Silicon Carbide Solution Growth: Observation Principle and Effect of Al Addition to Si-Cr Solvent
1个月前
已完结
Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process
1个月前
已完结
Book of Abstracts from the International Conference on Silicon Carbide and Related Materials
1个月前
已关闭
In-situ and ex-situ characterizations of PVT-grown 4H-SiC single crystals
1个月前
已完结
Development of High Quality 4H-SiC Single Crystal Wafers Grown by Solution Growth Technique
1个月前
已完结
Book of Abstracts from the International Conference on Silicon Carbide and Related Materials (ICSCRM 2024)
1个月前
已关闭
Effects of coil frequency on the carbon transport in the top-seeded solution growth of SiC single crystal
2个月前
已完结
Thermal Decomposition Cavities in Physical Vapor Transport Grown SiC
2个月前
已完结
Effect of subsurface damages in seed crystals on the crystal quality of 4H-SiC single crystals grown by the PVT technology
2个月前
已完结
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