Lv22
198 积分 2023-02-22 加入
The thickness and width of the intrinsic region effected electrical properties of GaAs p-i-n photodiodes
7天前
已完结
Recent Advances of Photodetection Technology Based on Main Group III–V Semiconductors
14天前
已完结
An 850 nm InGaAs Modified Uni-Traveling-Carrier Photodiode Enhanced by Distributed Bragg Reflector
15天前
已完结
Finite-Difference Time-Domain Simulations of Photon-Trapping Nanohole Arrays for Enhanced Optical Absorption in Ultrahigh-Speed GaAs Photodetectors
1个月前
已完结
Progress in InAs/InAsSb superlattice barrier infrared detectors
1年前
已完结
皖公网安备34019202002308
