Lv31
224 积分 2023-05-06 加入
Interface and Border Traps in the Gate Stack of Carbon Nanotube Film Transistors with an Yttria Dielectric
53分钟前
已完结
Self-Anchoring Process to Construct Highly-Aligned-Carbon Nanotube Transistors
1小时前
已完结
Scaling of N-Type Field-Effect Transistors Based on Aligned Carbon Nanotube Arrays
1小时前
已完结
Optimization of Double-Gate Carbon Nanotube FET Characteristics for Short Channel Devices
2小时前
已完结
Improved device performance in in situ SiNx/AlN/GaN MIS-HEMTs with ex situ Al2O3 passivation at elevated temperatures
1天前
已完结
An enhancement-mode C-H diamond FET with low work function gate material gadolinia
2天前
已完结
Van der Waals Ferroelectric CuCrP2S6‐Enabled Hysteresis‐Free Negative Capacitance Field‐Effect Transistors
2天前
已完结
Ferroelectricity in hafnium oxide thin films
13天前
已完结
Si metal-oxide-semiconductor field-effect transistor on Si-on-SiC directly bonded wafers with high thermal conductance
13天前
已完结
Synthesis of vertically aligned carbon nanotube arrays on silicon substrates
25天前
已完结
皖公网安备34019202002308
