Lv41
642 积分 2025-01-07 加入
Short-range order in non-stoichiometric amorphous silicon oxynitride and silicon-rich nitride
11天前
已完结
Structural and optical investigations of SiOxNy thin films deposited by R.F. sputtering
11天前
已完结
Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device
11天前
已完结
Improved switching stability in SiNx-based RRAM by introducing nitride insertion layer with high conductivity
12天前
已完结
Resistive switching memory effect of ZrO[sub 2] films with Zr[sup +] implanted
17天前
已完结
Field-induced resistive switching based on space-charge-limited current
17天前
已完结
Multifunctional Analog Resistance Switching of Si3N4-Based Memristors through Migration of Ag+ Ions and Formation of Si-Dangling Bonds
19天前
已完结
SiN-based optoelectronic synaptic devices: enhancing future cognitive computing systems
19天前
已完结
Effects of conducting defects on resistive switching characteristics of SiNx-based resistive random-access memory with MIS structure
25天前
已完结
Effect of the bottom electrode on the digital and analog resistive switching behavior of SiNx-based RRAM
1个月前
已完结
皖公网安备34019202002308
