Lv7
4575 积分 2024-04-03 加入
High-temperature power performance of X-band recessed-gate AlGaN/GaN HEMTs
21天前
已完结
Scalable Charge-Based Compact Model for Drain Current in Fin-Shaped GaN HEMTs
1个月前
已完结
Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs
1个月前
已完结
Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias
1个月前
已完结
Normally-Off InAlN/GaN Fin-MOSHEMT with Fluorine Treatment
1个月前
已完结
Enhanced Ion/Ioff ratio and RF performance for gate all around (GAA) AlGaN/GaN with GaN cap layer fin-HEMT for higher gate capacitance for improved RF communication
2个月前
已完结
Temperature-dependent characteristics of AlGaN/GaN FinFETs with sidewall MOS channel
2个月前
已完结
Ohmic contacts on p-GaN (Part II):
3个月前
已完结
Influence of Transverse Geometry of Sidewall Gates on Characteristics of AlGaN/GaN Fin-HEMTs
3个月前
已完结
Barrier and channel thickness engineering to optimize fin height for enhancement mode Al0.3Ga0.7N/GaN FinHEMT
3个月前
已完结
皖公网安备34019202002308
