Lv3
384 积分 2025-07-04 加入
Electronic structure ofIn2O3and Sn-dopedIn2O
1天前
待确认
Electronic structure of Al- and Ga-doped ZnO films studied by hard X-ray photoelectron spectroscopy
1天前
待确认
High-temperature N ion implantation for performance-enhanced current-blocking layers in β-Ga2O3
1个月前
已完结
Universal role of dopant-VGa complexes induced carrier suppression in Si/Ge/Sn/Zr-doped β -Ga2O3
1个月前
已完结
Universal role of dopant-VGa complexes induced carrier suppression in Si/Ge/Sn/Zr-doped β -Ga2O3
1个月前
已完结
Practical guide for inelastic mean free paths, effective attenuation lengths, mean escape depths, and information depths in x-ray photoelectron spectroscopy
2个月前
已完结
High temperature annealing of n-type bulk β-Ga2O3: Electrical compensation and defect analysis—The role of gallium vacancies
2个月前
已完结
Band bending and surface defects in β-Ga2O3
2个月前
已完结
High-temperature annealing induced electrical compensation in UID and Sn doped β-Ga2O3 bulk samples: The role of VGa–Sn complexes
2个月前
已完结
High-temperature annealing induced electrical compensation in UID and Sn doped β-Ga2O3 bulk samples: The role of VGa–Sn complexes
2个月前
已完结
皖公网安备34019202002308
