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30 积分 2024-10-23 加入
Ionization energies and electron mobilities in phosphorus- and nitrogen-implanted 4H-silicon carbide
3天前
已完结
3300V-Class 4H SiC Implantation-Epitaxial Mosfets with Low Specific On-Resistance of 11.6mΩcm<sup>2</sup> and High Avalanche Withstanding Capability
28天前
已完结
Simulation, Fabrication and Characterization of 3300V/10A 4H-SiC Power DMOSFETs
28天前
已完结
Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates
1个月前
已完结
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