Lv1
40 积分 2025-07-04 加入
Fabrication of high-brightness silicon vacancy color-center ensembles in 4H-SiC via MeV particles
5天前
已完结
Vacancy-related color centers in two-dimensional silicon carbide monolayers
12天前
已完结
Temperature dependence of the AB lines and optical properties of the carbon–antisite-vacancy pair in 4H−SiC
2个月前
已完结
Effect of cerium impurity on the stable growth of the 4H-SiC polytype by the physical vapour transport method
2个月前
已完结
High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method
2个月前
已完结
Positively charged carbon vacancy defect as a near-infrared emitter in 4H-SiC
2个月前
已完结
Optically Active Point Defects in 4H–SiC: Identification of Microscopic Mechanisms and Prospects for Quantum Applications
2个月前
已完结
Photoluminescence Spectra of Stacking Defects in 4H-SiC Crystals
2个月前
已完结
High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate
3个月前
已完结
Influence of nitrogen doping and annealing on the silicon vacancy in4H−SiC
3个月前
已完结
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