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Lv7
3360 积分
2024-06-09 加入
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Mechanism of enhancing B removal from Si with V addition using Al Si as the refining solvent
2小时前
待确认
Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal*
6天前
已完结
Photoluminescene study acceptor defects in lightly doped n type GaSb single crystals
6天前
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Interface shape and crystallinity in LEC GaAs
7天前
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Dynamic behavior of dislocations in InAs: In comparison with III–V compounds and other semiconductors
7天前
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Residual impurities and electrical properties of undoped LEC InAs single crystals
10天前
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On the Stability and Oxidation of Single Crystal (100) InAs Surfaces
10天前
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Growth and Properties of High Quality InAs Single Crystals
10天前
已完结
Lattice Perfection of GaSb and InAs Single Crystal Substrate
10天前
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Wet etching generation of dislocation pits with clear facets in LEC-InAs single crystals
10天前
已完结
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