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2024-01-15 加入
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The effect of different strain on the structural and optical properties of multilayer γ-InSe
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待确认
Au–InSe van der Waals Schottky junctions with ultralow reverse current and high photosensitivity
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Back Gated Multilayer InSe Transistors with Enhanced Carrier Mobilities via the Suppression of Carrier Scattering from a Dielectric Interface
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Properties, Synthesis, and Device Applications of 2D Layered InSe
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Electrically Confined Electroluminescence of Neutral Excitons in WSe2 Light‐Emitting Transistors
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High-sensitivity shortwave infrared photodetectors of metal-organic frameworks integrated on 2D layered materials
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Acoustic resonances in non-Hermitian open systems
2个月前
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High Quality Near‐Infrared Single‐Mode Lasing from γ‐InSe Using a Transferrable Planar Microcavity
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Monolayer InSe photodetector with strong anisotropy and surface-bound excitons
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Observation of Generalized Dynamic Localizations in Arbitrary‐Wave Driven Synthetic Temporal Lattices
5个月前
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