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origin2017
Lv5
900 积分
2023-02-14 加入
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Band order reversal and valley engineering driving to dual high electron and hole mobility in strained monolayer BS
14天前
已完结
Perspectives and recent advances of two-dimensional III-nitrides: Material synthesis and emerging device applications
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Improving carrier mobility in two-dimensional semiconductors with rippled materials
23天前
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Strain‐Engineered Ultrahigh Mobility in Phosphorene for Terahertz Transistors
1个月前
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ABINIT: Overview and focus on selected capabilities
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Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal
2个月前
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Demonstration of a high-sensitivity and wide-dynamic-range terahertz graphene hot-electron bolometer with Johnson noise thermometry
3个月前
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Understanding epitaxial growth of two-dimensional materials and their homostructures
3个月前
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Intrinsic piezoelectricity of monolayer group IV–V MX2: SiP2, SiAs2, GeP2, and GeAs2
5个月前
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Phonon-limited mobility in two-dimensional semiconductors with spin-orbit coupling
5个月前
已完结
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