Lv1
90 积分 2023-07-17 加入
Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stability
3个月前
已完结
The humidity effect on the breakdown voltage characteristics and the transport parameters of air
5个月前
已完结
Impact of AlGaN Barrier Thickness and Substrate Material on the Noise Characteristics of GaN HEMT
5个月前
已关闭
High-linearity on-chip GaN-on-Si temperature sensors based on an E-mode-compatible process
5个月前
已完结
基于双片锯齿电极的宽带声光偏转器
5个月前
已完结
High-linearity on-chip GaN-on-Si temperature sensors based on an E-mode-compatible process
6个月前
已完结
Effective Suppression of Amorphous Ga2O and Related Deep Levels on the GaN Surface by High-Temperature Remote Plasma Pretreatments in GaN-Based Metal–Insulator–Semiconductor Electronic Devices
6个月前
已完结
Epitaxial regrowth and characterizations of vertical GaN transistors on silicon
7个月前
已完结
GaN quasi-vertical trench MOSFETs grown on Si substrate with ON-current exceeding 1 A
7个月前
已完结
1200 V Fully-Vertical GaN-on-Si Power MOSFET
7个月前
已完结