苏黎
Lv4
560 积分
2022-01-29 加入
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Intrinsic Ohmic Contacts and Polarity‐Tunable Schottky Barriers in M8X12–Graphene (M = Mo, W; X = S, Se) van der Waals Heterostructures for High‐Performance and Bipolar Device Applications
1个月前
已完结
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Relationship between force constants and bond lengths for CX (X = C, Si, Ge, N, P, As, O, S, Se, F, Cl and Br) single and multiple bonds: formulation of Badger’s rule for universal use
3个月前
已完结
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Transition-Metal-Catalyzed C–S, C–Se, and C–Te Bond Formations via Cross-Coupling and Atom-Economic Addition Reactions. Achievements and Challenges
3个月前
已完结
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Electronic properties of twisted Sb/WTe2 van der Waals heterostructure with controllable band gap, band alignment, and spin splitting
3个月前
已完结
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First-principles calculations of the electronic properties of SiC-based bilayer and trilayer heterostructures
3个月前
已完结
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Graphene/WSeTe van der Waals heterostructure: Controllable electronic properties and Schottky barrier via interlayer coupling and electric field
3个月前
已完结
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First‐Principles Study of Lattice Thermal Conductivity in SnSe Bilayer and Trilayer
5个月前
已完结
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Two-dimensional type-II MSi2N4/InS (M = Mo, W) heterostructures for photocatalysis
10个月前
已完结
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Contrary luminescence behaviors of InGaN/GaN light emitting diodes caused by carrier tunneling leakage
10个月前
已完结
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Mobility of two-dimensional materials from first principles in an accurate and automated framework
11个月前
已完结