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50 积分 2024-10-21 加入
A comparative study of channel designs for SiC MOSFETs: Accumulation mode channel vs. inversion mode channel
4天前
已完结
Practical Design of 4H-SiC Superjunction Devices in the Presence of Charge Imbalance
6天前
已完结
Development of SiC Superjunction MOSFET: A Review
6天前
已完结
Implementation of a short channel (0.3 μm) for 4H-SiC MOSFETs with deep P-well using ‘channeling’ implantation
14天前
已完结
Improved Short-Circuit Ruggedness for 1.2kV 4H-SiC MOSFET Using a Deep P-Well Implemented by Channeling Implantation
14天前
已完结
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