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20 积分 2025-05-13 加入
Ab initio quantum transport simulation of the sub-1 nm gate-length monolayer and bilayer α-MoTe 2 field-effect transistors
38分钟前
待确认
Band gap opening of graphene by forming a graphene/PtSe2 van der Waals heterojunction
1天前
已完结
Scaling limits of monolayer AlN and GaN MOSFETs
2天前
已完结
Ab-Initio Quantum Transport Simulation of Sub-1 nm Gate Length Monolayer and Bilayer WSe2 Transistors: Implications for Ultra-Scaled CMOS Technology
2天前
已完结
Theoretical exploration of the multifunctional applications of Sc2CT2 (T = F, O) MXenes: p–n junction diodes, field effect transistors, and phototransistors
16天前
已完结
Ab initio quantum transport simulation of low-power and high-performance MOSFETs based on monolayer platinum diselenide
1个月前
已完结
Excellent Device Performance of Sub‐5‐nm Monolayer Tellurene Transistors
2个月前
已完结
Sub-10 nm two-dimensional transistors: Theory and experiment
3个月前
已完结
Comparative analysis of Schottky barriers for heterogeneous defect domains in monolayer WS2 field-effect transistors
3个月前
已完结
Ab-Initio Quantum Transport Simulation of Sub-1 nm Gate Length Monolayer and Bilayer WSe2 Transistors: Implications for Ultra-Scaled CMOS Technology
3个月前
已完结
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