Lv5
1360 积分 2025-07-01 加入
Self-aligned implanted mesa termination enables a high BFOM of 1.64 GW/cm2 and non-edge junction breakdown for vertical GaN SBDs
7天前
已完结
Pulsed N2 plasma surface treatment for AlGaN/GaN HEMTs prior to PECVD SiNx passivation to reduce plasma damage
7天前
已完结
Investigation of anomalous positive bias temperature instability in GaN MIS-HEMTs with PEALD SiNx gate dielectrics
14天前
已关闭
Improved Interface Quality and Stability of AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors Using N2-Annealed Atomic-Layer-Deposited SiNx Gate Dielectrics
1个月前
已关闭
Study of the impact of interface traps associated with SiN X passivation on AlGaN/GaN MIS-HEMTs
2个月前
已完结
Interface charge engineering on an in situ SiNx/AlGaN/GaN platform for normally off GaN MIS-HEMTs with improved breakdown performance
2个月前
已完结
Improved device performance in in situ SiNx/AlN/GaN MIS-HEMTs with ex situ Al2O3 passivation at elevated temperatures
2个月前
已完结
The impact of defect evolution on the electrical performance of AlGaN/GaN HEMT after 14-MeV neutron irradiation
3个月前
已完结
Electric field-modulated AlGaN/GaN Schottky barrier diode with high breakdown voltage via polarized charge around thin GaN channel
3个月前
已完结
Revisiting the epitaxial Si3N4 crystalline cap on AlGaN/GaN via evolutionary structure search
3个月前
已完结
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