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70 积分 2025-06-25 加入
Improvement of HfOx-Based RRAM Device Variation by Inserting ALD TiN Buffer Layer
1个月前
已完结
ReRAM: History, Status, and Future
1个月前
已完结
Comparisons of switching characteristics between Ti/Al2O3/Pt and TiN/Al2O3/Pt RRAM devices with various compliance currents
1个月前
已完结
Analysis of metal insulator transitions in VO2 and V2O3 for RRAMs
2个月前
已完结
Analysis of metal insulator transitions in VO2 and V2O3 for RRAMs
2个月前
已关闭
Endurance enhancement of ZnO RRAM through interfacial oxidation control and conduction mechanism analysis
3个月前
已完结
The effect of the top electrode on the switching behavior of bipolar Al2O3/ZnO RRAM
3个月前
已完结
The effect of oxygen affinity electrode Ti on the performance of vanadium oxide-based valence change resistive random access memory
3个月前
已完结
Influence of non-inert electrode thickness on the performance of complementary resistive switching in AlOxNy-based RRAM
3个月前
已完结
Analysis of the Nd dopant on optical, dielectric and biological properties of ZnO nanostructures
3个月前
已完结
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