Lv11
60 积分 2024-09-27 加入
High-$k$ Metal–Insulator–Metal Capacitors for RF and Mixed-Signal VLSI Circuits: Challenges and Opportunities
4小时前
待确认
2D fin field-effect transistors integrated with epitaxial high-k gate oxide
3个月前
已完结
Two-dimensional-materials-based transistors using hexagonal boron nitride dielectrics and metal gate electrodes with high cohesive energy
3个月前
已完结
Magnesium niobate as a high-κ gate dielectric for two-dimensional electronics
3个月前
已完结
皖公网安备34019202002308
