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300 积分 2025-02-12 加入
2D Electron Gas‐Induced the Lowered Tunneling Barrier and Ohmic Behavior Simultaneously in 2D Metal‐Semiconductor Contacts
16天前
已完结
Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions
17天前
已完结
Interaction- and defect-free van der Waals contacts between metals and two-dimensional semiconductors
17天前
已完结
Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures
17天前
已完结
Few-Layer MoS2 p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation
17天前
已完结
S-scheme heterojunction photocatalysts based on 2D materials
17天前
已完结
Contact Engineering in Two-Dimensional Transition Metal Dichalcogenide-Based Devices: Industry-Compatible Approaches toward Ultralow Contact Resistance
17天前
已完结
Recent Contact Strategies for Two-Dimensional Electronics
17天前
已完结
Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces
21天前
已完结
Schottky Barrier Heights and the Continuum of Gap States
21天前
已完结
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