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120 积分 2025-11-18 加入
Well-suppressed interface states and improved transport properties of AlGaN/GaN MIS-HEMTs with PEALD SiN gate dielectric
10天前
已关闭
Well-suppressed interface states and improved transport properties of AlGaN/GaN MIS-HEMTs with PEALD SiN gate dielectric
10天前
已关闭
A High Performance Normally-Off AlGaN/GaN Split-Gate Metal-Insulator-Semiconductor High Electron Mobility Transistor (MIS-HEMT) Using Piezo Neutralization Technique
17天前
已完结
A dual-gate and Γ-type field plate GaN base E-HEMT with high breakdown voltage on simulation investigation
17天前
已完结
Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic
17天前
已完结
Enhanced high electron mobility transistor featuring a lattice matched AlInGaN/GaN heterojunction and composite gate structure
18天前
已完结
A Novel D-Mode Triple-Layer Cap Recessed-Gate Al0.20Ga0.80N/GaN HEMT for Radio Frequency and Low Noise Applications
18天前
已完结
A novel depletion-mode T-shaped recessed-gate GaN HEMT with AlGaN/GaN/InAlGaN double heterojunction for RF and low noise applications
18天前
已完结
High power density X-band source-connected field plate-free AlGaN/GaN HEMT with recessed gate oxidation process
18天前
已完结
Research on High Threshold Voltage, High Output Current and Low Gate Leakage Current p-GaN and Grooved Gate Composite Gate HEMT with N-Well and AlGaN–GaN–AlGaN Double Barrier Cap Layer
24天前
已完结
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