Lv2
126 积分 2024-09-05 加入
Characterization of graphene-silicon Schottky barrier diodes using impedance spectroscopy
21天前
已完结
Charge trapping gate stack enabled non-recessed normally off AlGaN/GaN HEMT with high threshold voltage stability
2个月前
已完结
Recess-free thin-barrier AlGaN/GaN Schottky barrier diodes with ultra-low leakage current: Experiment and simulation study
3个月前
已完结
2.57GW/cm2 normally-off composite stepped gate GaN-based HEMT with p-GaN buried layer and field plate
3个月前
已完结
Enhancement of device performance in vertical Au/Ni/β-Ga2O3 Schottky barrier diodes using regularly aligned inner field plates
3个月前
已完结
Improved breakdown voltage mechanism in AlGaN/GaN HEMT for RF/Microwave applications: Design and physical insights of dual field plate
3个月前
已完结
Low turn-on voltage AlGaN/GaN Schottky barrier diode with a low work function anode and high work function field plate
3个月前
已完结
Thermal stability of graphene in inert atmosphere at high temperature
4个月前
已完结
Electroluminescence and Gate Carrier Dynamics in a Schottky-Type p-GaN Gate Double-Channel GaN HEMT
5个月前
已完结
皖公网安备34019202002308
