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35 积分 2021-01-04 加入
Increasing the hole energy by the p-type dual polarization for high internal quantum efficiency of 237 nm-band deep ultraviolet light-emitting diodes
2天前
已完结
Efficient and droop-free AlGaN-based UV-C LED using the inverted linearly graded active region and engineered hole source layer
2天前
已完结
Carrier Recombination in Nitride-Based Light-Emitting Devices: Multiphonon Processes, Excited Defects, and Disordered Heterointerfaces
2天前
已完结
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
1个月前
已完结
Participation of Defects Localized at Heterointerfaces and Extended Defects in the Degradation of Nitride-Based Light-Emitting Devices
3个月前
已完结
Enhanced output power in an InGaN-GaN multiquantum-well light-emitting diode with an InGaN current-spreading layer
3个月前
已完结
The effect of ammonia partial pressure on the growth of semipolar (11–22) InGaN/GaN MQWs and LED structures
4个月前
已完结
Effect of Showerhead Gap Position on The Growth of InGaN/GaN MQWs
5个月前
已完结
Enhanced Efficiency InGaN/GaN Multiple Quantum Well Structures via Strain Engineering and Ultrathin Subwells Formed by VPit Sidewalls
5个月前
已完结
The effect of ammonia partial pressure on the growth of semipolar (11–22) InGaN/GaN MQWs and LED structures
5个月前
已完结
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