Lv5
960 积分 2021-09-14 加入
N-polar GaN: Epitaxy, properties, and device applications
1年前
已完结
Improved hole injection and carrier distribution in AlGaN deep-ultraviolet light-emitting diodes with bidirectional-staircase-barrier structure
1年前
已完结
Stacked GaN/AlN last quantum barrier for high-efficiency InGaN-based green light-emitting diodes
1年前
已完结
Recent Advances in Packaging Technologies of AlGaN‐Based Deep Ultraviolet Light‐Emitting Diodes
1年前
已完结
Remarkable efficiency improvement in AlGaN-based ultraviolet light-emitting diodes using graded last quantum barrier
1年前
已完结
Stacked GaN/AlN last quantum barrier for high-efficiency InGaN-based green light-emitting diodes
1年前
已完结
Atomistic analysis of Auger recombination in c -plane (In,Ga)N/GaN quantum wells: Temperature-dependent competition between radiative and nonradiative recombination
1年前
已完结
Temperature Dependence of Excitonic Auger Recombination in Excitonic-Complex-Free Monolayer WS2 by Considering Auger Broadening and Generation Efficiency
1年前
已完结
Utility of Shockley–Read–Hall analysis to extract defect properties from semiconductor minority carrier lifetime data
1年前
已完结
Research Progress of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
1年前
已完结
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