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50 积分 2025-12-08 加入
Design and Fabrication of a Novel 1200 V 4H-SiC Trench MOSFET With Periodically Grounded Trench Bottom Shielding
7天前
已完结
A Novel Deep-Trench Super-Junction SiC MOSFET with Improved Specific On-Resistance
10天前
已完结
High-Mobility 4H-SiC p-Channel MOSFETs on Nonpolar Faces
10天前
已完结
Self-clamped P-shield 4H-SiC trench MOSFET for low turn-off loss and suppress switching oscillation
10天前
已完结
Effects of post-treatment progress on the morphology and surface state of 4H-SiC trenches
10天前
已完结
4H-SiC Trench MOSFET with Deep P-Well using Channeling Implantation
10天前
已完结
Analysis of Static and Dynamic Characteristics of 1.2 kV 4H-SiC Trench MOSFETs with Trenched P-Source and Buried P+ Layers
10天前
已完结
Enhancing 1.2 kV 4H-SiC MOSFET Performance and Ruggedness Through Deep P-Well Technology
17天前
已完结
Influence of P+ Body on Performance and Ruggedness of 1.2 kV 4H-SiC MOSFETs
17天前
已完结
Simultaneous improvement of high-frequency and Baliga figures of merit of 1.7 kV 4H-SiC MOSFET with retrograded JFET doping
17天前
已完结
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